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VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 1 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mtp pressfit igbt power module primary dual forward features ? buck pfc stage with warp 3 igbt and fred pt ? hyperfast diode ? integrated thermistor ? isolated baseplate ? very low stray inductance desi gn for high speed operation ? ultrafast switching igbt ? pressfit pins locking techno logy. patent # us.263.820 b2 ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? lower conduction losses and switching losses ? optimized for welding, ups, and smps applications ? pressfit pins technology ? direct mounting to heatsink ? ? ? ? ? ? ? ? ? ? ? primary characteristics igbt, t j = 150 c v ces 600 v v ce(on) at 25 c at 80 a 2.11 v i c at 80c 96 a fred pt ? ap diode, t j = 150 c v rrm 600 v i f(dc) at 80 c 11 a v f at 25 c at 5 a 1.1 v fred pt ? chopper diode, t j = 150 c v r 600 v i f(dc) at 80 c 22 a v f at 25 c at 60 a 2.07 v speed 30 khz to 150 khz package mtp circuit configurat ion dual forward mtp pressfit (package example) absolute maximum ratings parameter symbol test conditions max. units igbt collector to em itter voltage v ces 600 v gate to emitter voltage v ge 20 v maximum continuous collector current at v ge = 15 v, t j = 150 c maximum i c t c = 25 c 138 a t c = 80 c 96 pulse collector current i cm (1) 330 clamped inductive load current i lm 330 maximum power dissipation p d t c = 25 c 543 w antiparallel ? diode repetitive peak reverse voltage v rrm 600 v maximum continuous forward current t j = 150 c maximum i f(dc) t c = 25 c 17 a t c = 80 c 11 maximum non-repetitive peak current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 60 maximum power dissipation p d t c = 25 c 24 w ? patent(s): www.vishay.com/patents ? this vishay product is protected by one or more united states and international patents.
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 2 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? absolute maximum ratings indicate sustained limits beyo nd which damage to the device may occur (1) v cc = 300 v, v ge = 15 v, l = 500 h, r g = 4.7 ? , t j = 150 c ? chopper ? diode repetitive peak reverse voltage v rrm 600 v maximum continuous forward current ? t j = 150 c maximum i f t c = 25 c 33 a t c = 80 c 22 maximum non-repetitive peak current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 135 maximum power dissipation p d t c = 25 c 57 w maximum operating junction temperature t j 150 c storage temperature range t stg -40 to +150 isolation voltage v isol t j = 25 c, all terminals shorted, ? f = 50 hz, t =1 s 3500 v electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units igbt collector to emitter breakdown voltage bv ces v ge = 0 v, i c = 1.5 ma 600 - - v temperature coefficient of ? breakdown voltage ? v br(ces) / ? t j i c = 1.0 ma (25 c to 125 c) - 0.6 - v/c collector to em itter voltage v ce(on) v ge 15 v, i c = 80 a - 2.11 2.48 v v ge = 15 v, l c = 80 a, t j = 125 c - 2.43 - gate threshold voltage v ge(th) v ce = v ge , i c = 750 a 3.2 4.4 6.2 v temperature coefficient of ? threshold voltage ? v ge(th) / ? t j v ce = v ge , ? i c = 1.0 ma (25 c to 125 c) --12-mv/c forward transconductance g fe v ce = 20 v, i c = 80 a - 97 - s transfer characteristics v ge v ce = 20 v, i c = 80 a - 6.6 - v collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 8 100 a v ge = 0 v, v ce = 600 v, ? t j = 125 c -0.1- ma gate to emitter leakage i ges v ge = 20 v - - 250 na ap diode blocking voltage bv rrm i r = 1.5 ma 600 - - v forward voltage drop v fm i f = 5 a - 1.1 1.27 v i f = 5 a, t j = 125 c - 0.96 - chopper diode forward voltage drop v fm i f = 60 a - 2.07 2.53 v i f = 60 a, t j = 125 c - 1.87 - blocking voltage bv rm i r = 100 a 600 - - reverse leakage current i rm v rrm = 600 v - 2 70 a v rrm = 600 v, t j = 125 c - 12 - absolute maximum ratings parameter symbol test conditions max. units
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 3 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) energy losses include tail and diode reverse recovery switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units pfc igbt total gate charge (turn-on) q g i c = 60 a ? v cc = 400 v ? v ge = 15 v -540- nc gate to emitter charge (turn-on) q ge -84- gate to collector charge (turn-on) q gc -192- turn-on switching loss e on i c = 150 a, v cc = 300 v, ? v ge = 15 v, r g = 4.7 ? , ? l = 500 h, t j = 25 c (1) -0.51- mj turn-off switching loss e off -2.66- total switching loss e tot -3.17- turn-on delay time t d(on) -173- ns rise time t r -79- turn-off delay time t d(off) -374- fall time t f -66- turn-on switching loss e on i c = 150 a, v cc = 300 v, ? v ge = 15 v, r g = 4.7 ? , ? l = 500 h, t j = 125 c (1) -0.66- mj turn-off switching loss e off -2.75- total switching loss e tot -3.41- turn-on delay time t d(on) -167- ns rise time t r -80- turn-off delay time t d(off) -389- fall time t f -69- input capacitance c ies v ge = 0 v ? v cc = 30 v ? f = 1 mhz - 14 020 - pf output capacitance c oes -1010- reverse transfer capacitance c res -174- reverse bias safe operating area rbsoa i c = 330 a, v cc = 300 v, ? v p = 600 v, r g = 4.7 ? , ? v ge = 15 v, l = 500 h, ? t j = 150 c full square recovery parameter (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units ap diode peak reverse recovery current i rr i f = 10 a ? di/dt = 200 a/s ? v rr = 200 v -10- a reverse recovery time t rr -104- ns reverse recovery charge q rr -537- nc chopper diode peak reverse recovery current i rr i f = 50 a ? di/dt = 200 a/s ? v rr = 200 v -4.7- a reverse recovery time t rr -73-ns reverse recovery charge q rr -171- nc peak reverse recovery current i rr i f = 50 a ? di/dt = 200 a/s ? v rr = 200 v, t j = 125 c - 10.3 - a reverse recovery time t rr -140- ns reverse recovery charge q rr -716- nc thermistor electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units resistance r t j = 25 c - 30 000 - ? b value b t j = 25 c/t j = 85 c - 4000 - k
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 4 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) a mounting compound is recommended and the torque should be rech ecked after a period of 3 hours to allow for the spread of the compound fig. 1 - allowable case temper ature vs. continuous collector current (maximum igbt continuo us collector current vs. case temperature) fig. 2 - i c vs. v ce (igbt reverse bias soa, t j = 150 c, v ge = 15 v) fig. 3 - i c vs. v ce (typical igbt output characteristics, v ge = 15 v) fig. 4 - i c vs. v ce (typical igbt output characteristics, t j = 125 c) thermal and mechanical specifications parameter symbol min. typ. max. units igbt junction to case igbt thermal resistance - - 0.23 ap fred pt junction to ca se diode thermal resistance r thjc --5.1 c/w fred pt junction to case di ode thermal resistance - - 2.2 case to sink, flat, grea sed surface per module r thcs -0.06-c/w mounting torque 10 % to heatsink (1) --4nm approximate weight - 65 - g 0 20 40 60 80 100 120 140 160 0 20406080100120140160 allowa b le case temperature ( c) i c - continuous collector current (a) dc 0.1 1 10 100 1000 1101001000 i c (a) v ce (v) 0 50 100 150 200 250 300 0 1.0 2.0 3.0 4.0 5.0 6.0 i c (a) v ce (v) t j = 125 c t j = 25 c t j = 150 c 0 50 100 150 200 250 300 0 1.0 2.0 3.0 4.0 5.0 6.0 i c (a) v ce (v) v g e = 12 v v g e = 15 v v g e = 18 v v g e = 9 v
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 5 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - i c vs. v ge (typical igbt transfer characteristics) fig. 6 - v geth vs. i c (typical igbt gate threshold voltage) fig. 7 - i ces vs. v ces (typical igbt zero gate voltage collector current) fig. 8 - i f vs. v fm (typical antiparallel diode forward characteristics) fig. 9 - allowable case temper ature vs. continuous forward current (maximum antipa rallel diode continuous forward current vs. case temperature) fig. 10 - i f vs. v fm (typical chopper diode forward characteristics) 0 20 40 60 80 100 120 140 160 345678 i c (a) v g e (v) t j = 25 c t j = 125 c v ce = 20 v 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v g eth (v) i c (ma) t j = 25 c t j = 125 c 0.0001 0.001 0.01 0.1 1 100200300400500600 i ce s (ma) v ce s (v) t j = 25 c t j = 125 c t j = 150 c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v fm (v) t j = 25 c t j = 125 c t j = 150 c 0 20 40 60 80 100 120 140 160 02468101214161820 allowa b le case temperature ( c) i f - continuous forwar d current (a) dc 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i f (a) v fm (v) t j = 25 c t j = 125 c t j = 150 c
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 6 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - allowable case temper ature vs. continuous forward current (maximum chopper diod e continuous forward current vs. case temperature) fig. 12 - i rm vs. v r (typical chopper diode reverse leakage current) fig. 13 - energy loss vs. i c (typical igbt energy loss vs. i c ) t j = 125 c, v cc = 300 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 14 - switching time vs. i c (typical igbt swit ching time vs. i c ) t j = 125 c, v cc = 300 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 15 - energy loss vs. r g (typical igbt energy loss vs. r g ) t j = 125 c, v cc = 300 v, i c = 150 a, v ge = 15 v, l = 500 h fig. 16 - switching time vs. r g (typical igbt swit ching time vs. r g ) t j = 125 c, v cc = 300 v, i c = 150 a, v ge = 15 v, l = 500 h 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 allowa b le case temperature ( c) i f - continuous forwar d current (a) dc 0.0001 0.001 0.01 0.1 100200300400500600 i rm (ma) v r (v) t j = 25 c t j = 125 c t j = 150 c 0 0.5 1 1.5 2 2.5 3 0 20406080100120140160 energy (mj) i c (a) e off e on 10 100 1000 0 20406080100120140160 s witching time (ns) i c (a) t r t d(off) t d(on) t f 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 energy (mj) r g ( e off e on 10 100 1000 10 000 0 5 10 15 20 25 30 35 40 45 50 s witching time (ns) r g () t d(off) t f t d(on) t r
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 7 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 17 - t rr vs. di f /dt (typical antiparallel diode reverse recovery time vs. di f /dt) v rr = 200 v, i f = 10 a fig. 18 - i rr vs. di f /dt (typical antiparallel diode reverse recovery current vs. di f /dt) v rr = 200 v, i f = 10 a fig. 19 - q rr vs. di f /dt (typical antiparallel diode reverse recovery charge vs. di f /dt) v rr = 200 v, i f = 10 a fig. 20 - t rr vs. di f /dt (typical chopper diode reverse recovery time vs. di f /dt) v rr = 200 v, i f = 50 a fig. 21 - i rr vs. di f /dt (typical chopper diode reverse recovery current vs. di f /dt) v rr = 200 v, i f = 50 a fig. 22 - q rr vs di f /dt (typical chopper diode reverse recovery charge vs. di f /dt) v rr = 200 v, i f = 50 a 60 80 100 120 140 160 180 200 100200300400500 t rr (ns) d i f / d t (a/s) t j = 25 c t j = 125 c 4 6 8 10 12 14 16 18 20 22 24 26 28 30 100 200 300 400 500 i rr (a) d i f / d t (a/s) t j = 25 c t j = 125 c 300 500 700 900 1100 1300 1500 1700 1900 100 200 300 400 500 q rr (nc) d i f / d t (a/s) t j = 25 c t j = 125 c 40 60 80 100 120 140 160 180 200 100200300400500 t rr (ns) d i f / d t (a/s) t j = 25 c t j = 125 c 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 i rr (a) d i f / d t (a/s) t j = 25 c t j = 125 c 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 100 200 300 400 500 q rr (nc) d i f / d t (a/s) t j = 25 c t j = 125 c
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 8 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 23 - z thjc vs. t 1 rectangular pulse duration (maximum thermal impedance z thjc characteristics - (igbt)) fig. 24 - z thjc vs. t 1 rectangular pulse duration (maximum thermal impedance z thjc characteristics - (chopper diode)) circuit configuration 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 z thjc - thermal impe d ance junction to case ( c/w) t 1 - rectangular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z thjc - thermal impe d ance junction to case ( c/w) t 1 - rectangular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc d1 e7 g 6 th a7 e6 d2 q 1 e1 f1 d3 d4 g 7 m7 q 4 b1 a1 i1 l1 m3 m2
VS-150MT060WDF-P www.vishay.com vishay semiconductors revision: 09-oct-17 9 document number: 96009 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95567 device co d e 2 3 4 5 6 5 1 3 2 4 6 7 1 -vi s hay s emiconductor s product - current rating (150 = 150 a) -e ss ential part number (mt = mtp package) - voltage code x 10 = voltage rating (example: 060 = 600 v) - die i g bt technology (w = warp s peed i g bt) - circuit configuration (df = dual forward) 7 - pinout code (pre ss fit pin s ) v s - 150 mt 060 w df -p
outline dimensions www.vishay.com vishay semiconductors revision: 08-nov-16 1 document number: 95567 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mtp pressfit dimensions in millimeters pin po s ition 33.2 0.3 31.8 0.2 63.5 0.3 27.5 0.3 39.5 0.3 48.7 0.3 r 2.6 1.3 30 7.6 22.8 45 0.3 6 6 x 45 15.2 0.4 17 0.35 2.5 13.5 0.2 20 0.2 3 0.15 detail a s cale 4 : 1 b b ? 5 ? 2.5 ? 2.1 0.1 8 1.5 s ection b-b s cale 4 : 1 24 18 12 1 4 2 m 3 6 7 5 a bcde f g h il
legal disclaimer notice www.vishay.com vishay revision: 08-feb-17 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. ? 2017 vishay intertechnology, inc. all rights reserved

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